ba12001b / ba12003b / ba12003bf / ba12004b standard ics high voltage, high current darlington transistor array ba12001b / ba12003b / ba12003bf / ba12004b the ba12001b, ba12003b, ba12003bf, and ba12004b are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of darlington transistors. because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such as relay coils, attachments can be kept to a minimum. with an output sustain voltage as high as 60v and an output current (sink current) of 500ma, this product is ideal for use with various drivers and as an interface with other elements. ! applications drivers for leds, lamps, relays and solenoids interface with other elements ! features 1) high output current. (i out =500ma max.) 2) high output sustain voltage. (v out =50v max.) 3) seven darlington transistors built in. 4) built-in surge-absorbing clamp diode. (note : refer to the ?reference items when using in application.? ) ! ! ! ! block diagram in1 in2 in3 in4 in5 in6 in7 gnd out1 out2 out3 out4 out5 out6 out7 com 8 16 15 14 13 12 11 10 1 2 3 4 5 6 7 9
ba12001b / ba12003b / ba12003bf / ba12004b standard ics ! ! ! ! internal circuit configuration in com out gnd 3k ? 7.2k ? fig.1 ba12001b in com out gnd 3k ? 7.2k ? 2.7k ? fig.2 ba12003b / bf in com out gnd 3k ? 7.2k ? 10.5k ? fig.3 ba12004b ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol limits unit v ce 60 v input voltage input current v in ? 0.5 + 30 v other than ba12001b ba12001b dip package sop package i in 25 output current i out 500 ground pin current i gnd 2.3 ? 1 a power dissipation pd 1250 ? 2 625 ? 3 mw diode reverse voltage v r 60 v diode forward current i f 500 ma operating temperature topr ? 25 + 75 ?c storage temperature tstg ? 55 + 150 ?c ma / unit ma / unit power supply voltage ? 1 pulse width 20ms, duty cycle 10%, same current for all 7 circuits ? 2 reduced by 10mw for each increase in ta of 1 ? c over 25 ? c . ? 3 reduced by 50mw for each increase in ta of 1 ? c over 25 ? c . ! ! ! ! recommended operating conditions (ta=25 c) parameter symbol min. typ. max. unit conditions output current i out ?? 350 ma fig.9, 10 power supply voltage v ce ?? 55 v ? input voltage (excluding ba12001b) v in ?? 30 v ? input current (ba12001b only) i in ?? 25 ? ma / unit
ba12001b / ba12003b / ba12003bf / ba12004b standard ics ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions output leakage current i l ? 010 a v ce = 60v dc current transfer ratio h fe 1000 2400 ? v output saturation voltage v ce(sat) ? 0.94 1.1 v 1.14 1.3 1.46 1.6 input voltage v in ? v 1.75 2 2.53 5 v in ? v 1.91 2.4 2.75 6 v in ? v 2.17 3.4 3.27 8 input current i in ? ma v in = 3.85v 0.90 1.35 ba12003b / bf ba12004b ba12003b / bf ba12004b ba12003b / bf ba12004b ba12003b / bf ba12004b 0.39 0.5 diode reverse current i r ? 050 av r = 60v diode forward voltage v f ? 1.73 2 v i f = 350ma input capacitance c in ? 30 ? pf v ce = 2v, i out = 350ma i out = 100ma, i in = 250 a i out = 200ma, i in = 350 a i out = 350ma, i in = 500 a v ce = 2v, i out = 100ma v ce = 2v, i out = 200ma v ce = 2v, i out = 350ma v in = 5v v in = 0v, f = 1mhz note: input voltage and input current for ba12001 vary based on external resistor. ! ! ! ! measurement circuits open open i l v ce (1) output leakage current i l open i i i o v ce (sat) (2) dc current transfer ratio output saturation voltage i i i o v ce ( sat) h fe = open i o v ce v i (3) input voltage v in open open v i (4) input current i in open i r v r open (5) diode reverse current i r open open i f v f (6) diode forward voltage i f open open v i l o h i capacitance bridge f test signal level 20mvrms (7) input capacitance c in fig.4
ba12001b / ba12003b / ba12003bf / ba12004b standard ics ! ! ! ! application example ry (1) relay driver led (2) led driver fig.5 ! ! ! ! application notes the ba12001b is a transistor array which can be directly coupled to a general logic circuit such as pmos, cmos, or ttl. a current limiting resistor needs to be connected in series with the input. the ba12003b / bf can be coupled directly to ttl or cmos output (when operating at 5v). in order to limit the input current to a stable value, resistors are connected in series to each of the inputs. the ba12004b is designed for direct coupling to cmos or pmos output using a 6 to 15v power supply voltage. in order to limit the input current to a stable value, resistors are connected in series to each of the inputs. the load for each of these products should be connected between the driver output and the power supply. to protect the ic from excessive swing voltage, the com pin (pin 9) should be connected to the power supply. fig.6 shows the configuration of the on-chip diode for surge absorption. in the construction of the surge-absorbing diode,there is an n-p junction between the n-layer (n-well + bl) and the substrate (p-sub) so that when the diode is on, current flows from the output pin to the substrate. in terms of the vertical construction, this diode is configured similar to a pnp transistor. when using the surge-absorbing diode, take appropriate measures regarding the thermal characteristics of the design considering the current that will be handled. also, if motor back-rush current or other conditions that will result continued surge current to flow to the surge-absorbing diode can be foreseen, we strongly recommend connecting a schottky barrier diode (or other type of diode with a low foward voltage) in parallel with the surge-absorbing diode to construct a bypass route for the surge current. iso p iso p b / l idi isub n + p + in-flow current to the surge-absorbing diode n + n + out com p-sub fig.6 vertical construction of the surge-absorbing diode n-well
ba12001b / ba12003b / ba12003bf / ba12004b standard ics ! ! ! ! electrical characteristic curves power dissipation : pd (mw) ambient temperature : ta ( ? c) 1200 1250 1400 1000 800 600 625 200 0 25 50 75 100 125 150 fig.7 power dissipation vs. ambient temperature other than ba12003bf ba12003bf 400 output current : i o (ma) duty cycle : (%) 500 400 300 200 100 0 10 20 30 40 50 60 70 80 90 100 all series 2ch 4ch 5ch 7ch 6ch 3ch fig.8 output conditions (i) output current : i out (ma) duty cycle (%) 500 400 350 300 200 100 0 20 40 60 80 100 10% 20% ta = 75 ? c ta = 25 ? c 110ma 64ma fig.9 output conditions (ii) when all circuits are on all series output current: i out (ma) supply voltage: v cc (v) 500 400 350 300 200 100 0 10 20 30 40 50 max. usage conditions usage conditions range fig.10 usage conditions range per circuit the shaded range should never be exceeded under any circumstances dc current gain : h fe output curret : i out (ma) 5000 2000 1000 100 200 500 ta = 25 ? c v ce = 2.0v 10 20 50 100 200 500 1000 fig.11 dc current transfer ratio vs. output current output current : i out (ma) collector to emitter voltage : v ce (v) 500 400 300 0 100 200 0 0.5 1.0 1.5 2.0 2.5 ta = 25 ? c ta = 80 ? c ta = ? 30 ? c i in = 250 a fig.12 output current vs. voltage between collector and emitter output current : i out (ma) collector to emitter voltage : v ce (v) 500 400 300 0 100 200 10 0.5 1.0 1.5 2.0 2.5 ta = 25 ? c ta = 80 ? c ta = ? 30 ? c i in = 350 a fig.13 output current vs. voltage between collector and emitter output current : i out (ma) collector to emitter voltage : v ce (v) 500 400 300 0 100 200 0 0.5 1.0 1.5 2.0 2.5 ta = 25 ? c ta = 80 ? c ta = ? 30 ? c i in = 500 a fig.14 output current vs. voltage between collector and emitter input current : i in (ma) input voltage : v in (v) 20 15 10 0 5 10 20 30 40 ta = ? 25 ? c ta = 25 ? c ta = 75 ? c fig.15 input current vs. input voltage (ba12003b / bf)
ba12001b / ba12003b / ba12003bf / ba12004b standard ics input voltage : v in (v) input current : i in (ma) 4 3 2 1 0 10 20 30 40 ta = 25 ? c ta = 75 ? c ta = ? 25 ? c fig.16 input current vs. input voltage (ba12004b) output voltage : v ce out (v) input voltage : v in (v) 0.5 1 1.5 2.5 2 25 20 15 10 5 0 ta = 75 ? c ta = 25 ? c ta = ? 25 ? c v out = 20v r l = 68 ? fig.17 output voltage vs. input voltage (ba12003b / bf) output voltage : v out (v), v ce (v) 25 20 5 15 10 0 12345 ta = 75 ? c ta = 25 ? c ta = ? 25 ? c v out = 20v r l = 68 ? input voltage : v in (v), v i (v) fig.18 output voltage vs. input voltage (ba12004b) ! ! ! ! external dimensions (units : mm) dip16 sop16 ba12001b / ba12003b / ba12004b ba12003bf 0.4 0.1 1.27 0.15 0.15 0.1 0.3min. 4.4 0.2 6.2 0.3 0.11 1.5 0.1 1 16 10.0 0.2 8 9 0.51min. 0.3 0.1 9 16 8 1 6.5 0.3 3.2 0.2 4.25 0.3 0.5 0.1 19.4 0.3 2.54 0 ~ 15 7.62
appendix appendix1-rev1.0 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document use silicon as a basic material. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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